For various discrete devices, passive components, and assembled electronic components, scanning electron microscopy (SEM) is commonly used for failure analysis and quality control. High-resolution imaging can identify microscopic defects such as open circuits, short circuits, and bridging in metallization layers. In combination with voltage contrast imaging, it can diagnose latch-up effects in CMOS circuits and leakage paths in PN junctions. For thermistors, ferroelectric materials, passivation layers, and other materials, SEM can also be used to observe grain size, particle distribution, and microstructure, providing a basis for device performance optimization and fabrication process improvement.
